Polarization field assisted heterostructure design for efficient deep ultra-violet light emitting diodes

摘要

A polarization field assisted DUV-LED including a bottom substrate and a n-contact/injection layer formed on the bottom substrate. The n-contact/injection layer includes: a first region for accommodating strain relaxation; a second region for lateral access with a low sheet resistance and higher conductivity compared to the first region to minimize resistive losses and heat generation; and a third region of a graded vertical injection layer with low vertical resistance to minimize heat loss due to vertical resistance. The DUV-LED also includes a p-contact region, and an emitting active region between the n-contact/injection layer and the p-contact region. The injection of electrons and holes into quantum wells proceeds due to tunneling of electrons and holes under the barriers due to less than 2 nm thickness of barriers. This carrier injection lowers the Turn ON voltage of LEDs and reduces heat generation.