POLARIZATION ELECTRIC FIELD ASSISTED HOLE SUPPLIER AND P-TYPE CONTACT STRUCTURE, LIGHT EMITTING DEVICE AND PHOTODETECTOR USING THE SAME

摘要

A hole supplier and p-contact structure for a light emitting device or a photodetector includes a p-type group III nitride structure and a hole supplier and p-contact layer made of Al-containing group III nitride formed on the p-typegroup III nitride structure and being under a biaxial inplane tensile strain, the hole supplier and p-contact layer has a thickness in the range of 0.6-10 nm, and the p-type group III nitride structure is formed over an active region of the light emitting device or photodetector. A light emitting device and a photodetector with a hole supplier and p-contact structure.