首页> 外国专利> GALLIUM ARSENIDE SINGLE CRYSTAL AND GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE

GALLIUM ARSENIDE SINGLE CRYSTAL AND GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE

机译:砷化镓单晶和砷化镓单晶衬底

摘要

A gallium arsenide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface. There is a gallium arsenide single crystal substrate, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumference located 10 mm inward from an outer circumference toward a center and a location located 5 mm inward from the outer circumference.
机译:一个砷化镓单晶,包括具有圆柱形状的直的主体部分,其中在外圆周部分的切向方向上的残余应变是压缩应变,外周部分在从外部10mm的内周表面之间延伸在10mm的内周表面之间直的主体部分的朝向中心轴线的圆周表面和从外圆周表面向内5mm的位置。有一个砷化镓单晶基板,其中在外圆周部分中的切向方向上的残余应变是压缩应变,外周部分在从外圆周向中心和位置向内10mm的内圆周延伸。从外圆周定位5mm。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号