首页>
外国专利>
DOPED METAL OXIDE SEMICONDUCTOR AND THIN-FILM TRANSISTOR MADE THEREFROM AND ITS APPLICATION
DOPED METAL OXIDE SEMICONDUCTOR AND THIN-FILM TRANSISTOR MADE THEREFROM AND ITS APPLICATION
展开▼
机译:掺杂的金属氧化物半导体和由此制成的薄膜晶体管及其应用
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.
展开▼