Exhaust gas treatment method and manufacturing method of silicon carbide polycrystalline wafer

摘要

Problem to be solved: to provide a method of treating an exhaust gas and a method of manufacturing a silicon carbide polycrystal wafer capable of preventing a high level of chloro silane polymer from being deposited on an exhaust pipe or the like, and preventing an exhaust pipe or the like from being blocked.A chemical vapor deposition is carried out to form a silicon carbide polycrystal film.Exhaust gas containing chlorine containing silicon source gasComprising silicon carbide precipitatesIntroduction of exhaust gas into the exhaust gas treatment room of 1400 K to 1800 KCarbon and silicon molar ratios C: Si in the exhaust gas contacting the silicon carbide precipitateMolar ratio control process to control 1.1 to 2.0The exhaust gas after the molar ratio control stepIn response to the silicon carbide precipitate plateSilicon carbide precipitation process for precipitation of silicon carbideIncludingExhaust gas treating method.Diagram