PROBLEM TO BE SOLVED: To provide an evaluation method of a SiC substrate capable of efficiently identifying penetration defects existing in a SiC substrate at low cost. SOLUTION: In this method of evaluating a SiC substrate, a preparatory step of preparing two or more SiC wafers from a SiC wafer grown from the same seed crystal and a main surface of each of the two or more SiC wafers are observed. It has a defect position identification step for identifying the position of a defect and a comparison step for comparing the positions of defects on two or more SiC substrates, and in the preparation step, it is the closest to the seed crystal among the two or more SiC substrates. The SiC substrate located in the above was used as the reference wafer, and in the comparison process, the defect of the reference wafer and the defect of the SiC substrate other than the reference wafer were compared, and the two defects compared were the defects in the [11-20] direction. If the distance is 0.6 mm or more, it is determined that the defect is not associated with the same penetration defect, and if it is less than 0.2 mm, it is determined that the two compared defects are defects associated with the same penetration defect. [Selection diagram] Fig. 1
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