Method for measuring oxygen concentration or carbon concentration of single crystal silicon

摘要

Problem to be solved: to increase the accuracy of repeated measurement in a method of measuring oxygen concentration or oxygen concentration of a test sample wafer cut out from a single crystal silicon ingot using a bandsaw or the like.The method of measuring oxygen concentration or carbon concentration of single crystal silicon isA single crystal silicon ingot is cut in the radial direction to cut the sample waferA sample strip is cut from the sample wafer (S13);The surface of the sample piece is ground (S14) andA step (S17) is provided for measuring the oxygen concentration or carbon concentration of the sample piece after the grinding process.Diagram