Manufacturing method of laminated structure, manufacturing method of semiconductor device, and laminated structure

摘要

Problem to be solved: to provide a semiconductor device having a low cost at a low cost and a low cost semiconductor device having excellent electrical characteristics such as breakdown voltage characteristics.Solution: semiconductor layer 1 having first major surface 2 and second major surfaceThe first conductive layer 3 on the first main surface side andA method of manufacturing a laminated structure 10 comprising a second conductive layer 5 on the second main surface side;Mist CVD methodA semiconductor layer is grown on the substrateObtaining a laminate including a substrate and a semiconductor layer;Removing the substrate from the laminate andForming a first conductive layer on the first major surface of the semiconductor layer andForming a second conductive layer on the second main surface side of the semiconductor layer.A substrate containing mainly crystalline. Beta. - Ga2O3 as a semiconductor layer is grown using a substrate mainly containing lithium tantalate as the substrate.Diagram