Dummy substrate for optoelectronic device and its manufacturing method

摘要

The present invention comprises a pseudo substrate (10) for an optoelectronic device (100) adapted for the growth of light emitting diodes (11, 12, 13), and the pseudo substrate (10) comprises a buffer structure (2) formed on a substrate (1) and an upper surface (1a) of the substrate (1).The buffer structure (2) isAt least one first portion (21);A layer formed of a bulk gallium nitride (GAN) isAt least one free surface (210) of the first type is partitioned on the surface opposite to the upper surface (1a) of the substrateThe respective free surfaces (210) of the first mold areAdapted to growth on the free surface of at least one light emitting diode (11) primarily based on III-V compounds capable of emitting light (L1) at a first wavelength;Comprises at least one first portion (21).The buffer structure (2) isAt least one second portion (22);In the second portion (22),An indium gallium nitride (InGaN) layer and an intermediate layer of Gan are alternately provided.The indium is present at a first mass ratioSaid second portionAt least one free surface (220) of the second type is partitioned on the surface opposite to the upper surface (1a) of the substrateEach of the second free surfaces (220) isAdapted to growth on the free surface of at least one light emitting diode (12) primarily based on III-V compounds capable of emitting light (L2) at a second wavelength different from the first wavelength;Comprises at least one second portion (22).In the reference plane (P) oriented parallel to the plane of the upper surface (1a) of the substrate (1), the second portion (22) of the buffer structure (2) is offset to the first portion (21) of the buffer structure (2).The present invention also describes a photoelectron device (100) and a manufacturing method.Diagram