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Method for controlling convection pattern of silicon melt and method of manufacturing silicon single crystal

机译:控制硅熔体对流模式的方法及制造硅单晶的方法

摘要

Control method of convection pattern of silicon meltObtaining the temperature of the first measuring point which is not overlapped with the rotation center of the quartz crucible at the surface of the silicon melt in the quartz crucible rotating in the no magnetic field state, andThe step of confirming that the temperature of the first measurement point is a period change andAt the timing at which the temperature change of the first measurement point becomes a predetermined stateThe driving of the magnetic field applying portion is started, and a horizontal magnetic field is applied to the silicon melt.After thatUp to 0.2 TeslaIt is provided with a step of fixing the direction of convection in a plane perpendicular to the applied direction of the horizontal magnetic field in the silicon melt.
机译:硅的控制方法融合的第一测量点的温度与石英坩埚表面的石英坩埚的旋转中心旋转在No磁场状态下的石英坩埚中的旋转中心,以及确认步骤第一测量点的温度是启动第一测量点的温度变化变为磁场施加部分的预定天体驱动的时序变化,并且将水平磁场施加到硅熔体上在众多到0.2特色的情况下,提供了在硅熔体中垂直于水平磁场的施加方向的平面中固定对流方向的步骤。

著录项

  • 公开/公告号JPWO2020174598A1

    专利类型

  • 公开/公告日2021-03-11

    原文格式PDF

  • 申请/专利权人 株式会社SUMCO;

    申请/专利号JP20200526645

  • 发明设计人 横山 竜介;杉村 渉;

    申请日2019-02-27

  • 分类号C30B29/06;C30B15/20;

  • 国家 JP

  • 入库时间 2022-08-24 17:39:39

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