首页> 外国专利> SYMMETRIC TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH REDUCED SPURIOUS MODES

SYMMETRIC TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH REDUCED SPURIOUS MODES

机译:对称的横向激励膜散装声谐振器,具有减少的杂散模式

摘要

Acoustic resonators and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate. A back surface of the piezoelectric plate is attached to the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern including an interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on the diaphragm. A front-side dielectric layer is formed on the front surface of the piezoelectric plate between, but not over, the IDT fingers. A back-side dielectric layer is formed on a back surface of the diaphragm. Thicknesses of the IDT fingers and the front-side dielectric layer are substantially equal. An acoustic impedance Zm of the IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8Zm≤Zfd≤1.25Zm.
机译:公开了声谐振器和滤波器。声谐振器包括基板和压电板。除了形成跨越基板中的腔体的隔膜的压电板的一部分之外,压电板的后表面附接到基板。包括叉指换能器(IDT)的导体图案形成在压电板的前表面上,IDT的交错指设置在隔膜上的IDT。前侧介电层形成在压电板的前表面上,但不超过IDT指状物。背侧介电层形成在隔膜的后表面上。 IDT指状物和前侧介电层的厚度基本相等。 IDT指状物的声阻抗Zm和前侧介电层的声阻抗Zfd满足0.8zm≤zfd≤1.25zm的关系。

著录项

  • 公开/公告号US2021075393A1

    专利类型

  • 公开/公告日2021-03-11

    原文格式PDF

  • 申请/专利权人 RESONANT INC.;

    申请/专利号US202017081692

  • 发明设计人 VENTSISLAV YANTCHEV;

    申请日2020-10-27

  • 分类号H03H9/02;H03H3/04;H03H9/13;H03H9/17;H03H9/56;

  • 国家 US

  • 入库时间 2022-08-24 17:37:37

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