METHOD OF SORTING SILICON SINGLE CRYSTAL SUBSTRATE AND SILICON SINGLE CRYSTAL SUBSTRATE

摘要

The present invention is a method for selecting a silicon single crystal substrate including: a preparation step of preparing a silicon single crystal substrate as a candidate by fabrication from an ingot; a particle beam irradiation step; a recovery heat treatment step; a measurement step of measuring an excess carrier decay curve; a judgement step of calculating, in the excess carrier decay curve, Δt_Tail(X)=t_Tail(X)-[-LT×ln(X/100)] from a time LT until the excess carrier concentration decays to 1/e and a time t_Tail(X) until the excess carrier concentration decays to X% (1≤X≤10), and judging as acceptable when the Δt_Tail(X) is a predetermined judgement value or less; and a selection step of selecting a silicon single crystal substrate fabricated from the ingot from which the silicon single crystal substrate judged as acceptable was fabricated. This provides a method for selecting a silicon single crystal substrate that makes it possible to suppress a tail current by controlling recombination lifetime.