TRANSISTOR HAVING HIGH WITHSTAND VOLTAGE AND HIGH ELECTRON MOBILITY AND PREPARATION METHOD THEREFOR

摘要

A transistor having high withstand voltage and high electron mobility and a preparation method therefor. The transistor having high withstand voltage and high electron mobility comprises: gate electrodes (108), source electrodes (107), a drain electrode (106), a barrier layer (105), a channel layer (104), a nucleation layer (103), and a substrate (101). The channel layer (104) is located between the barrier layer (105) and the substrate (101). The channel layer (104) comprises a P-type III-V group semiconductor layer, wherein the projection of the nucleation layer (103) on the substrate (101) overlaps at least part of that of the drain electrode (106), the drain electrode (106) is in electrical contact with the two-dimensional electron gas of the channel layer (104), the source electrodes (107) are in electrical contact with the P-type III-V group semiconductor layer, and the gate electrodes (108) are located on the barrier layer (105).