Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor

摘要

The present invention relates to a new integrated-and-fire (IF) neuron circuit using a single-gate feedback field effect electronic device (FBFET) for a small area and low power consumption. The neuron circuit according to the capacitor generates a potential by charging the current input from the synapse through a capacitor, and when the generated potential exceeds a threshold value, a feedback field effect electronic device of a single gate connected to the capacitor is used. , A spike voltage corresponding to the generated potential may be generated and output, and the generated spike voltage may be reset using transistors connected to the feedback field effect electronic device.