Modulation-doped semiconductor laser and its manufacturing method

摘要

PROBLEM TO BE SOLVED: To secure an appropriate carrier concentration. A modulation-doped semiconductor laser is composed of a plurality of layers including a plurality of first layers 16 and a plurality of second layers 18 stacked alternately, and includes a plurality of quantum wells 14 containing acceptors and donors, and a plurality of layers. It has a p-type semiconductor layer 20 in contact with the uppermost layer and an n-type semiconductor layer 12 in contact with the lowermost layer of a plurality of layers. The plurality of first layers 16 contain acceptors so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer 20. The plurality of second layers 18 contain acceptors so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer 20. The plurality of second layers 18 further contain donors. In the plurality of second layers 18, the effective carrier concentration corresponding to the difference between the p-type carrier concentration and the n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers 18. [Selection diagram] Fig. 2