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Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element

机译:半导体光学元件,半导体激光元件以及制造半导体光学元件和半导体激光元件的方法以及制造半导体激光模块和半导体元件的方法

摘要

A semiconductor optical element includes a semiconductor layer portion that includes an optical waveguide layer. The semiconductor layer portion contains a first impurity having a function of suppressing atomic vacancy diffusion and a second impurity having a function of promoting atomic vacancy diffusion, between a topmost surface of the semiconductor layer portion and the optical waveguide layer. The semiconductor layer portion includes two or more regions that extend in a deposition direction with different contents of at least one of the impurities. At least one of the two or more regions contains both the first impurity and the second impurity. The two or more regions have different degrees of disordering in the optical waveguide layer achieved through atomic vacancy diffusion and different band gap energies of the optical waveguide layer.
机译:半导体光学元件包括具有光波导层的半导体层部分。半导体层部分在半导体层部分的最顶表面与光波导层之间包含具有抑制原子空位扩散的功能的第一杂质和具有促进原子空位扩散的功能的第二杂质。半导体层部分包括在沉积方向上延伸的两个或更多个区域,其中至少一种杂质的含量不同。两个或更多个区域中的至少一个包含第一杂质和第二杂质两者。通过原子空位扩散和光波导层的不同带隙能量,两个或更多个区域在光波导层中具有不同的无序度。

著录项

  • 公开/公告号US10069280B2

    专利类型

  • 公开/公告日2018-09-04

    原文格式PDF

  • 申请/专利权人 FURUKAWA ELECTRIC CO. LTD.;

    申请/专利号US201514825660

  • 申请日2015-08-13

  • 分类号H01S5/20;H01S5/042;G02B6/122;H01S5/16;H01S5/22;G02B6/134;H01S5/028;H01S5/30;

  • 国家 US

  • 入库时间 2022-08-21 13:01:35

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