High power wavelength stabilized multiemitter semiconductor laser module using highly manufacturable DBR diode lasers

摘要

This paper reports preliminary performances of a multiemitter diode laser module using ten spatially multiplexed Distributed Bragg Reflector - High Power Diode Laser (DBR-HPDL) chip, emitting 100 W CW in the 920 nm range, with 95 % of power in 0.17 N.A., on a 135 um core / 155 urn cladding multimode fiber, and stabilized spectrum width of only 0.6 nm. Diode chip implemented an integrated multiple-orders Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths using a manufacturable, reliable and high yield technology. Up to three pitches, DBR-HPDLs 2.5 nm spaced have been demonstrated on same wafer with excellent uniformity of performances across the wafer and emitted wavelengths. Since the absence of any wavelength locking optical element in the collimated beam path, multiemitter module of DBR-HPDL was assembled and tested in the production line using standard assembly process flow and without requiring any special alignment, as maturity demonstration of the proposed technology for mass production of wavelength stabilized high-power laser modules.