Heating apparatus of the type semiconductor - directly to the illumination of large surfaces for the lamps half - watt

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• 3. Lighting units of type semiconductor - directly to the illumination of large surfaces by lamps half - watt [P] . 法国专利： FR588183A . 1925-05-02

  机译： 半导体类型的照明单元-直接通过半瓦特灯照明大表面

• 4. Method of forming oxide layer of semiconductor device using single wafer type apparatus with lamp-heating type [P] . 韩国专利： KR20020072034A . 2002-09-14

  机译： 使用具有灯加热型的单晶片型设备形成半导体器件的氧化物层的方法

• 5. Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method [P] . 美国专利： US6133148A . 2000-10-17

  机译： 使用灯加热方法在单晶片型设备中沉积用于半导体器件的膜的方法

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