Device for a - and off or switching over from the compounds in electrotechnical or otherwise, preferably those of the high frequency - communications.

• 1. 用于使用移动通信网络来在一方面应用服务器与另一方面至少一个物联网通信设备之间进行数据传输的方法、移动通信网络、系统、物联网通信设备、程序和计算机程序产品 [P] . 中国专利： CN110169037A . 2019-08-23
• 2. 具有关断阀的电气动的停驻制动设施以及用于对受电子控制的气动制动系统进行控制的方法 [P] . 中国专利： CN112533805A . 2021-03-19
• 3. Device for a - and off or switching over from the compounds in electrotechnical or otherwise, preferably those of the high frequency - communications. [P] . 德国专利： DE1814085U . 1960-06-30

  机译： 用于在电气或其他方面（最好是在高频通信中）进行化合物的关断或切换的设备。

• 4. Device for a - and off or switchover of compounds in electrotechnical or otherwise preferably those of the high frequency - communications. [P] . 德国专利： DE1816774U . 1960-08-18

  机译： 用于在电工技术中或在其他情况下（最好是在高频通信中）打开和关闭或切换化合物的设备。

• 5. Device for a - and off or switching over from the compounds in electrotechnical or otherwise, preferably those of the high frequency - communications [P] . 德国专利： DE1415174A1 . 1970-02-12

  机译： 用于在电气或其他方面（最好是高频通信）中的化合物进行断断续续或切换的设备

• 1. Simulation of Arc Motion in Air Switching Devices Taking Ferromagnetic Material into Accout [J] . 李兴文, 吐松江卡日, 陈德桂, 等离子体科学和技术：英文版 . 2009,第002期
• 2. Quantum, power, and compound semiconductor devices high performance si-rf power and power-switching devices [C] . Brech, H., Hoshino, Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International . 2005
• 3. Switching Oscillation of High-frequency Wide Bandgap Power Semiconductor Devices [D] . Liu, Tianjiao. 2018
• 4. Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films [O] . Toshihiro Nakamura, Kohei Homma, Kunihide Tachibana 2013
• 5. Volume 2, Issue 3, Special issue on Recent Advances in Engineering Systems (Published Papers) Articles Transmit / Received Beamforming for Frequency Diverse Array with Symmetrical frequency offsets Shaddrack Yaw Nusenu Adv. Sci. Technol. Eng. Syst. J. 2(3), 1-6 (2017); View Description Detailed Analysis of Amplitude and Slope Diffraction Coefficients for knife-edge structure in S-UTD-CH Model Eray Arik, Mehmet Baris Tabakcioglu Adv. Sci. Technol. Eng. Syst. J. 2(3), 7-11 (2017); View Description Applications of Case Based Organizational Memory Supported by the PAbMM Architecture Martín, María de los Ángeles, Diván, Mario José Adv. Sci. Technol. Eng. Syst. J. 2(3), 12-23 (2017); View Description Low Probability of Interception Beampattern Using Frequency Diverse Array Antenna Shaddrack Yaw Nusenu Adv. Sci. Technol. Eng. Syst. 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• 6. Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics [R] . Baca, A. G. , Chang, P. C. , Hietala, V. M. , 1999

• 1. Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing [J] . Yue Hao ,Huaqiang Wu ,Yuchao Yang . 半导体学报：英文版 . 2021,第1期
• 2. Improved resistive switching stability of Pt/ZnO/CoO_x /ZnO/Pt structure for nonvolatile memory devices [J] . Guang Chen ,Cheng Song ,Feng Pan . 稀有金属：英文版 . 2013,第6期
• 3. Effect of Switching on Metal-Organic Interface Adhesion Relevant to Organic Electronic Devices [J] . Babaniyi Babatope ,Akogwu Onobu ,Olusegun O. Adewoye . 材料物理与化学进展（英文） . 2013,第7期
• 4. Comparison of Two Electronic Root Canal Length Measurement Devices: The Differences between Ratio Two Impedance Frequencies and Multi Frequencies [J] . Endang Suprastiwi ,Ratna Meidyawati . 口腔学期刊（英文） . 2014,第5期
• 5. 以最好的价格购买十分适合于受当地电网限制条件的电气设备优化它的电气设备规范 [C] . Bertrand Sacepe ,Robert Jeanjean . 中国供电国际会议 . 2000
• 6. 电气设备中的高频信号时域特征快速分析方法 [A] . 宗泽旭 . 2018