Semi-conductive device and method of making

摘要

902,153. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Sept. 19, 1958 [Sept. 23, 1957], No. 30047/58. Class 37. A semi-conductive device having a vacuum-tight envelope 2, 3, has arsenic in the space between the envelope and the system 1 consisting of the semiconductive body with such associated parts as have been provided in manufacture to provide connections to the body and for diffusion and/or alloying completely or in part to form zones in the body, so that the system is capable of fulfilling its function. The arsenic may be in its free form and it may be carried in a finely divided state in a binder such as a silicone " grease " or " oil." After sealing, the device may be heated at a temperature between 80‹ C. and the lowest electrode melting point for 100 hours; though this melting point may sometimes be exceeded if the system is lacquered. Any space remaining in the envelope may be filled with, say, nitrogen, a rare gas, or hydrogen, or even air. Examples are given of germanium and silicon transistors with emitter and collector pellets of indium and aluminium and with base contacts of tin-antimony alloy and goldantimony alloy.