Assembly is used to reduce the influence of temperature on an apparatus for measuring the density of the pulses comprising the transistors at the junction

• 1. 包括温度测量装置的加热装置以及用于在加热装置处进行温度测量和用于制造的方法 [P] . 中国专利： CN113834580A . 2021-12-24
• 2. 用于减少干旱对种植物性能的影响的系统，用于制备该系统的组分I的方法，使用该系统来减少干旱对种植物性能的影响的方法及其中使用的农具 [P] . 中国专利： CN111868013A . 2020-10-30
• 3. A device for measuring an entry which influences a field effect transistor is, comprising means for the temperature compensation [P] . 法国专利： FR2440599B1 . 1981-10-02

  机译： 一种用于测量影响场效应晶体管的入口的装置，包括用于温度补偿的装置

• 4. DRIVER CIRCUIT OF ELECTRO-OPTIC PANEL AND ELECTRO-OPTIC APPARATUS AND ELECTRONIC DEVICE COMPRISING THE SAME, ESPECIALLY REDUCING OR REMOVING BAD INFLUENCE DUE TO DELAY OF SAMPLING PULSE EASILY [P] . 韩国专利： KR20040097927A . 2004-11-18

  机译： 光电面板，光电装置和电子设备的驱动器电路，包括相同的驱动电路，尤其是由于采样脉冲的延迟而减少或消除了不良影响

• 5. APPARATUS FOR MEASURING TEMPERATURE OF TRANSISTOR JUNCTION [P] . SU1196699A1 . 1985-12-07

  机译： 测量晶体管结温的装置

• 1. Influence of Plasma Temperature on the Concentration of NO Produced by Pulsed Arc Discharge [J] . 胡辉, 陈卫鹏, 张锦丽, 等离子体科学和技术（英文版） . 2012,第003期
• 2. Effect of high density pulse electric current on solidification structure of low temperature melt of A356 alloy [J] . 何树先, 王俊, 孙宝德, 中国有色金属学报（英文版） . 2002,第003期
• 3. Stability of Electrical Characteristics of SiC "Super" Junction Transistors under Long- Term DC and Pulsed Operation at various Temperatures [C] . Siddarth G. Sundaresan, Aye-Mya Soe, Ranbir Singh Materials Research Society Meeting . 2012
• 4. A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications. [D] . Shui, Qiong. 2007
• 5. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness [O] . Ye Kyun Kim, Cheol Hyoun Ahn, Myeong Gu Yun, -1
• 6. Stability of Electrical Characteristics of SiC “Super ” Junction Transistors under Long- Term DC and Pulsed Operation at various Temperatures [O] . Siddarth G. Sundaresan, Aye-mya Soe, Ranbir Singh 2016

• 1. Reducing Radiation Dose by Using Pulse X-Ray Apparatus [J] . A. A. Komarskiy ,A. S. Chepusov ,V. L. Kuznetsov . 生物科学与医学（英文） . 2014,第2期
• 2. Influences of laser energy density and annealing on structure properties of AlN films prepared by pulsed laser deposition [J] . Lu Lei ,LIQing-shan ,LiLi . 光电子快报：英文版 . 2007,第4期
• 3. Influence of Temperature and Pentacene Thickness on the Electrical Parameters in Top Gate Organic Thin Film Transistor [J] . Abdoul Kadri Diallo ,El Hadji Babacar Ly ,Diene Ndiaye . 材料物理与化学进展（英文） . 2017,第3期
• 4. 3DK7E晶体管eb结反向脉冲损伤阈值测量及其损伤的分析 [C] . 米绍曾 . 中国电子学会可靠性分会第八届学术年会 . 1996
• 5. 减少测量过程中人为因素影响提高烟用醋纤丝束线密度测试准确性 [A] . 张建 . 2007