Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability

摘要

1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).