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A gettering process for the elimination of type change during the heat treatment of semi-conductor substances
A gettering process for the elimination of type change during the heat treatment of semi-conductor substances
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机译:一种消除半导体物质热处理过程中类型变化的吸气工艺
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摘要
Cu impurity is removed from a Ge slice by applying an In layer thereto, heating the slice to 650-750 DEG C. for at least ten minutes and removing the In by means of a substance e.g. HCl, which does not attack the Ge but which dissolves the In.
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