1,086,034. Resistance measurement. MOTOROLA Inc. June 16, 1966 [July 8, 1965], No.26998/66. Heading G1U. The resistivity of a thin film on a conductive or semi-conductive substrate (e.g. an epitaxial transistor) is measured by applying a constant current to a pair of contacts of significant area and measuring the voltage developed between them. The contacts may both be on the thin film Fig. 1 (not shown), or alternately Fig. 2 (not shown) one contact may be on the film and the other one on the other side of the substrate.
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机译:1,086,034。电阻测量。 MOTOROLA Inc. 1966年6月16日[1965年7月8日],第26998/66号。标题G1U。导电或半导电衬底(例如外延晶体管)上的薄膜的电阻率是通过将恒定电流施加到一对面积较大的触点并测量在它们之间产生的电压来测量的。触点可以都在图1的薄膜上(未显示),或者在图2(未示出)上,一个触点可以在薄膜上,另一触点可以在基板的另一侧。
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