A method of growing of crystals consisting of sic, bn, bp, aln or aip to a seed crystal

摘要

A water 1 (Fig. not shown) is recrystallized epitaxially on a seed 2 by the diagonal passage of a solution zone in direction of arrow 4 through wafer 1 from particles 3 of solid solvent in contact with wafer 1 and seed 2, passage of the molten zone being effected by means of a temperature gradient. The material to be crystallized may be of silicon carbide, boron nitride, boron phosphide, aluminium nitride, or aluminium phosphide. The solvent may be chromium. The material to be crystallized or the solvent may contain a doping agent.