INSULATED GATE FIELD-EFFECT TRANSISTOR WITH OPPOSITE-TYPE GATE CONNECTED REGION INSET IN SOURCE OR DRAIN

摘要

An IGFET with diffused source and drain regions of one conductivity type has formed in one of these regions a further diffused region, of the opposite conductivity type. The further region is directly connected to the gate electrode. In use as a Miller integrator with square wave input and saw tooth output the (reverse-biased) junction provided by the further region and the region (drain) containing it is used as the feedback capacitor. In use as an amplifier the region containing the further region is the source and the reverse-biased junction formed by the further region acts as a protective diode in a parallel with the gate insulation.