Boron doped silicon mfr - using boron enriched oxygen atmos - at diffusion temp

摘要

The silicon bodies are placed in a chamber at diffusion temp. and a stream of carrier gas, predominantly oxygen esp., 80% min., containing inert gas, esp., nitrogen, enriched with a boron compound e.g., boracic acid ester esp., boracic acid methyl ester, passed through the chamber. - The resultant boron doping conc. is uniformly distributed and the oxygen prevents formation of insoluble glass layers.