Hydrogen diffusion and microstructure in undoped and boron-doped hydrogenated amorphous silicon: An IR and SIMS study.

摘要

Hydrogenated amorphous silicon (a-Si:H) prepared by rf sputtering of a polycrystalline Si target at various rf powers 50 (le) P (le) 550 W (0.27--2.97 W/cm(sup 2)), target to substrate distance 1 (le) d (le) 2(double prime), and varying hydrogen partial p ...