A method for the production of low-oxygen gallium arsenide with the use of silicon or germanium as a dopant

摘要

The invention relates to a method of producing oxygen poor gallium arsenide with silicon or germanium as a dopant. An element of the III group of the Periodic System, particularly aluminum, is added to the gallium arsenide containing melt for gettering the oxygen. The invention is particularly suited for the production of gallium arsenide, which is processed into luminescence diodes.