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METHOD OF PRODUCING OXYGEN POOR GALLIUM ARSENIDE BY USING ALUMINUM WITH SILICON OR GERMANIUM AS A DOPANT
METHOD OF PRODUCING OXYGEN POOR GALLIUM ARSENIDE BY USING ALUMINUM WITH SILICON OR GERMANIUM AS A DOPANT
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机译:铝以硅或锗为掺杂剂生产贫氧砷化镓的方法
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摘要
The invention relates to a method of producing oxygen poor gallium arsenide with silicon or germanium as a dopant. An element of the III group of the Periodic System, particularly aluminum, is added to the gallium arsenide containing melt for gettering the oxygen. The invention is particularly suited for the production of gallium arsenide, which is processed into luminescence diodes.
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