S IN GADOPED WITH SILICON OR GERMANIUM METHOD OF PRODUCING A GALLIUM ARSENIDE CRYSTAL FROM A SOLUTION OF GAA

• 1. 硅掺杂的砷化铟/砷化镓量子点太阳电池的制作方法 [P] . 中国专利： CN102130206A . 2011-07-20
• 2. 一种掺杂砷化镓单晶晶体生长工艺 [P] . 中国专利： CN111893571B . 2021.04.30
• 3. PROCESS FOR THE MANUFACTURE OF A GALLIUM-ARSENIDE CRYSTAL FROM A SOLUTION OF Ga AS IN Ga, DOPED WITH SILICON AND GERMANIUM [P] . CA955156A . 1974-09-24

  机译： 由砷，硅和锗掺杂的砷化镓中的砷化镓溶液制备砷化镓晶体的方法

• 4. METHOD OF ATTACHING SILICON, GERMANIUM, AND GALLIUM ARSENIDE CRYSTALS TO ALUMINIUM CRYSTAL HOLDER [P] . 俄罗斯专利： RU95108710A . 1997-06-20

  机译： 将硅，锗和砷化镓晶体附着到铝晶体支架上的方法

• 5. Gallium arsenide products of the manufacturing method and apparatus as well as the semi-insulating semi-insulating GaAs single crystal and semi-insulating GaAs single crystal [P] . 日本专利： JP2010059052A5 . 2010-04-30

  机译： 砷化镓产品的制造方法，装置以及半绝缘半绝缘GaAs单晶和半绝缘GaAs单晶

• 1. Development of a Micro Photoluminescence Measurement System for the Spectrum Inspection of Gallium Arsenide/Gallium Arsenide Phosphide (GaAs/GaAs_(1-x) P_x) [C] . Mu-Chiau Xie, Fang-Jung Shiou, Geo-Ry Tang, International Conference on Advanced Manufacturing . 2012
• 2. Wet chemical and electrochemical processing of gallium arsenide, silicon, and germanium with fluoride and sulfide solutions [D] . Yota, Jiro 1993
• 3. Computational exploration of two-dimensional silicon diarsenide and germanium arsenide for photovoltaic applications [O] . Sri Kasi Matta, Chunmei Zhang, Yalong Jiao, 2018
• 4. Crystal structure of manganese gallium germanium silicon oxide (garnet type), Mn-3(Ga2-yMny)(Ge3-zSiz)O-12 (y=0.6, z=0.14; y=0.44, z=0), and of manganese gallium germanium silicon oxide (braunite type), Mn(Mn6-yGay)(Si1-zGez)O-12 (y=0.7, z=0.4) [O] . Wartchow R., Müller L., Binnewies M. 2003
• 5. Research and Development of Technologies for the Preparation of III-V Semiconductor Materials and on Methods for Evaluation of the Quality of These Materials - Gallium Arsenide Crystals - Gallium Arsenide Crucible Pulling [R] . Blaette, M. 1982

• 1. Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs) [J] . Yacouba Issa Diakite ,Sibiri D. Traore ,Yuriy Malozovsky . 现代物理（英文） . 2017,第4期
• 2. Preparation, characterization and nonlinear optical properties of colloidal gallium arsenide nanocrystals [J] . LIU Zhengang LIU Chunling LI Quanshui CHEN Zhijian GONG Qihuang . 稀有金属：英文版 . 2006,第2期
• 3. Optical Methods in Orientation of High-Purity Germanium Crystal [J] . Guojian Wang ,Yongchen Sun ,Yutong Guan . 结晶过程及技术期刊（英文） . 2013,第2期
• 4. Physical-Mechanical Properties of Germanium Doped Monocrystalline Silicon [J] . la Kurashvili Ia ,Ekaterine Sanaia ,George Darsavelidze . 材料科学与工程：中英文A版 . 2013,第010期
• 5. A New Method for Research of Grown-In Microdefects in Dislocation-Free Silicon Single Crystals [J] . V.I Talanin ,I.E Talanin ,N.Ph Ustimenko . 结晶过程及技术期刊（英文） . 2011,第2期
• 6. 直拉硅中锗掺杂对铁镓对反应动力学的影响 [C] . 朱海燕 ,何坚 ,朱笑东 . 第13届中国光伏大会 . 2013
• 7. LEC法砷化镓晶体生长中熔体流动与传热传质数值模拟 [A] . 王正乾 . 2009