Method and device for the crucible loose pulling structurally of high-quality single-crystal from the melt of a semiconductor material

• 1. 从坩埚中所含的熔体提拉半导体材料单晶的方法 [P] . 中国专利： CN109804109B . 2021.12.10
• 2. 从坩埚中所含的熔体提拉半导体材料单晶的方法 [P] . 中国专利： CN109804109A . 2019-05-24
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  机译： 通过从获得的熔融半导体棒中拉出来坩埚的a的坩埚松散区熔融的方法

• 4. Method for pulling a single crystal composed of semiconductor material from a melt contained in a crucible [P] . US11060202B2 . 2021-07-13

  机译： 从坩埚中包含的熔体中拔出由半导体材料组成的单晶的方法

• 5. A method of pulling a single crystal of semiconductor material from a melt contained within a crucible [P] . KR102258435B1 . 2021-06-01

  机译： 一种从坩埚内熔化的熔体中拉动半导体材料的单晶的方法

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