Aluminium silicide contacts - deposited on silicon substrates using vapour phase mixture of aluminium and silicon

摘要

The substrates are distributed over the inside of the bell of the chamber whose base contains separate aluminium and silicon sources with independently measured evaporation rates and individually controlled heaters. The content of Si in the mixture is approx. 1-2% of the total and the substrates heated to between 400-500 degrees C, esp. 480 degrees For 1% mixture 490 degrees for 2% mixture. The particle size of the metallizing is 15 mu, esp. 5 mu. Bridging of the exposed p-n junctions due to surface creep brought about by high affinity of Al for Si is prevented.