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SEMICONDUCTOR DEVICE FOR PRODUCING RADIATION IN RESPONSE TO INCIDENT RADIATION

机译:响应入射辐射而产生辐射的半导体装置

摘要

A semiconductor device for producing radiation in response to incident radiation of wavelength is made of a sandwich of semiconductor materials providing electrically in series a radiation detector which responds electrically to incident radiation, a capacitor for integrating the effect of the incident radiation and a radiation emitting diode which produces output radiation of a different wavelength and of intensity representative of the intensity of the incident radiation.
机译:用于响应于波长的入射辐射而产生辐射的半导体器件由半导体材料的夹心制成,该半导体材料的夹层串联地提供对入射辐射电响应的辐射检测器,用于积分入射辐射的影响的电容器以及辐射发射二极管。它产生不同波长的输出辐射,其强度代表入射辐射的强度。

著录项

  • 公开/公告号US3649838A

    专利类型

  • 公开/公告日1972-03-14

    原文格式PDF

  • 申请/专利权人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;

    申请/专利号USD3649838

  • 发明设计人 ROBERT J. PHELAN JR.;

    申请日1968-07-25

  • 分类号H01J39/12;

  • 国家 US

  • 入库时间 2022-08-23 07:58:40

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