Homogeneous epitactic growth layers of semiconductor material for electrical components, particularly for integrated circuit, having locally separated regions situated on a crystal wafer, by pyrolitic dissociation of a gaseous compound of the semiconductor material and by precipitating said semiconductor material upon a heated, monocrystalline carrier body which is coated at specific regions of its surface with a masking layer. The method is characterized by the fact that both bromine and hydrogen are included in the reaction gas, shifting the equilibrium of the reaction partners through development of additional hydrogen halide, during the precipitation process at the heated carrier body. Thus precipitation of the semiconductor material, occurs only at the places of the carrier body, not coated with the masking layer, while no semiconductor material is precipitated at the regions of the carrier body which are coated with the masking layer, due to a suppression of the heterogenic seed formation.
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