BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT

摘要

This disclosure provides a bistable resistor and materials therefor. The bistable resistor has base electrode, intermediate layer and counter electrode. Illustratively, intermediate layer includes a rare earth chalcogenide, e.g., EuO or EuS, doped with a percentage by weight of either a group VA element, e.g., Bi, or a first row transition element, e.g., Cr. Further, the practice of the invention includes having the host intermediate layer comprised of a combination of a plurality of different rare earth chalcogenides, and having a dopant configuration which includes a combination of a plurality of the individually suitable dopants.