首页> 外国专利> GENERATION OF WEAKLY DAMPED ELECTRON PLASMA SURFACE WAVES ON A SEMICONDUCTOR: AMPLIFICATION AND COUPLING OF ACOUSTIC WAVES ON AN ADJACENT PIEZOELECTRIC

GENERATION OF WEAKLY DAMPED ELECTRON PLASMA SURFACE WAVES ON A SEMICONDUCTOR: AMPLIFICATION AND COUPLING OF ACOUSTIC WAVES ON AN ADJACENT PIEZOELECTRIC

机译:半导体上弱阻尼电子等离子体表面波的产生:相邻压电板上声波的放大和耦合

摘要

Conduction electrons in a semiconductor which is subjected to an applied electric drift field and magnetic field are excited to give rise to a weakly damped electron plasma surface wave carrying negative or positive energy depending upon the direction of the applied magnetic field. Acoustic waves traveling along the surface of an adjacent piezoelectric are resonantly amplified and coupled to the electron surface waves.
机译:受到施加的电场漂移和磁场作用的半导体中的导电电子被激发,产生弱阻尼的电子等离子体表面波,该表面等离子体根据施加的磁场的方向携带负或正能量。沿着相邻压电体表面传播的声波被共振放大并耦合到电子表面波。

著录项

  • 公开/公告号US3731214A

    专利类型

  • 公开/公告日1973-05-01

    原文格式PDF

  • 申请/专利权人 MASSACHUSETTS INSTITUTE OF TECHNOLOGYUS;

    申请/专利号USD3731214

  • 发明设计人 BERS AUS;

    申请日1971-04-16

  • 分类号H03F3/04;

  • 国家 US

  • 入库时间 2022-08-23 06:29:11

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