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Josephson junction semiconductor device - with reduced perturbation effect on the existing magnetic field

机译:约瑟夫森结半导体器件-对现有磁场的干扰作用降低

摘要

Device comprises a thin electric barrier (insulating) such as a semiconductor barrier layer between two sheets of superconducting metal. The substrate incorporates electrical supply leads forming a plane supporting the junction and extending perpendicular to this plane while forming a flat portion in this plane. The support has a contour limited to covering the supply leads. The second superconducting layer extends beyond the contour of the first plane to contact the leads which supply it.
机译:装置包括两层超导金属之间的薄电阻挡层(绝缘层),例如半导体阻挡层。基板包含电源引线,这些电源引线形成支撑结的平面并垂直于该平面延伸,同时在该平面中形成平坦部分。支撑件的轮廓仅限于覆盖电源线。第二超导层延伸超过第一平面的轮廓,以接触提供它的引线。

著录项

  • 公开/公告号FR2188917A5

    专利类型

  • 公开/公告日1974-01-18

    原文格式PDF

  • 申请/专利权人 AIR LIQUIDEFR;

    申请/专利号FR19720020750

  • 发明设计人

    申请日1972-06-09

  • 分类号H01V11/00;G01R29/00;

  • 国家 FR

  • 入库时间 2022-08-23 05:15:03

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