Charge shift arrangement using charge coupled device principle - has conducting paths in gaps between electrodes on insulating layer

摘要

The charge shaft arrangement permits higher packing densities than have been attained hitherto and does not require the high temperature applications necessary in other manufacturing techniques. To a substrate, pref. of silicon, is applied a first electrically insulating layer, pref. of silicon dioxide. On this layer the conducting paths and electrodes are applied, these pref. comprising aluminium, wolfram, chrome, molybdenum or silicon, the paths being in the gaps shift chains of electrodes. A second insulating layer, pref. of silicon dioxide or aluminium trioxide is applied, with apertures for control leads to the electrodes.