Epitaxial growth from liquid phase - by semiconductor wafer covering over substrate for diffusion

摘要

Semiconductor material is deposited on a substrate by liquid phase epitaxial growth from a multicomponent melt which rests on the substrate. The melt is covered by a mono- or polycrystalline semiconductor wafer. After a preheating period the temp. is raised at a reduced rate to start dissolving the semiconductor material and to diffuse it into the substrate at a constant temp. An improved and controlled growth of the epitaxial layer is ensured by a simple and practical means.