A method for the production of bodies made of a fusible crystalline material, in particular semiconductor material, in which a continuous band of this crystalline material is produced, and is produced by the method body

摘要

1490114 Crystal growing from a melt PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 26 Feb 1975 [1 March 1974] 8021/75 Heading BIS A crystal in the form of tape is grown by flowing molten material over a heated element 1, of a suitable shape and made of a material which is wetted by the molten material, providing a seed crystal 4 of the material to be crystallised below the lower part of the heated element 2 and close to the element so that the upper part of the seed is wetted with the melt and forms a molten yarn 5 between the element and seed, and drawing away the seed 4 downwards to form a crystalline tape 7. It is preferred to use a heated element made of a refractory material resistant to the action of the molten material e.g. carbon, SiC and LiC. The method is particularly suitable for the growing of a tape of silicon wherein the supply of molten silicon is formed by the thermal decomposition of silane as the reduction of chlorosilane with hydrogen on an upper part of the heated element.