首页> 外国专利> method for manufacturing fusible bodies from crystalline material, in particular a crystalline semiconductor boules with continuous band of this material.and body produced by application of such a method.

method for manufacturing fusible bodies from crystalline material, in particular a crystalline semiconductor boules with continuous band of this material.and body produced by application of such a method.

机译:用结晶材料制造可熔体的方法,特别是具有这种材料连续带的结晶半导体棒,以及通过这种方法生产的熔体。

摘要

1490114 Crystal growing from a melt PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 26 Feb 1975 [1 March 1974] 8021/75 Heading BIS A crystal in the form of tape is grown by flowing molten material over a heated element 1, of a suitable shape and made of a material which is wetted by the molten material, providing a seed crystal 4 of the material to be crystallised below the lower part of the heated element 2 and close to the element so that the upper part of the seed is wetted with the melt and forms a molten yarn 5 between the element and seed, and drawing away the seed 4 downwards to form a crystalline tape 7. It is preferred to use a heated element made of a refractory material resistant to the action of the molten material e.g. carbon, SiC and LiC. The method is particularly suitable for the growing of a tape of silicon wherein the supply of molten silicon is formed by the thermal decomposition of silane as the reduction of chlorosilane with hydrogen on an upper part of the heated element.
机译:1490114从熔体中生长出来的晶体菲利普斯电子与关联工业有限公司1975年2月26日[1974年3月1日] 8021/75标题BIS通过使熔融材料流过合适形状的加热元件1来生长带状晶体。在被熔融材料润湿的材料中,在加热元件2的下部下方并靠近该元件提供要结晶的材料的籽晶4,从而使籽晶的上部被熔体润湿,并且在元件和种子之间形成熔融纱线5,并向下拉开种子4以形成结晶带7。优选使用由耐火材料制成的加热元件,该耐火材料抵抗熔融材料的作用,例如碳,SiC和LiC。该方法特别适合于硅带的生长,其中熔融硅的供应是通过硅烷的热分解形成的,这是因为硅烷在加热元件的上部被氢还原为氯硅烷。

著录项

  • 公开/公告号NL7502202A

    专利类型

  • 公开/公告日1975-09-03

    原文格式PDF

  • 申请/专利权人 N.V. PHILIPS GLOEILAMPENFABRIEKEN TE EINDHOVEN.;

    申请/专利号NL19750002202

  • 发明设计人

    申请日1975-02-25

  • 分类号B01J17/18;B01J17/22;

  • 国家 NL

  • 入库时间 2022-08-23 04:35:32

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