n-Type gallium antimonide mfr - contg sulphur and excess gallium, and exhibiting relaxation of conductivity

摘要

n-Type gallium antimonide is produced by seed-crystallisation from a melt of GaSb using the Czochralski method to obtain a single crystal of GaSb contg. alloy additions. Seed crystallisation is undertaken from a melt of GaSb with a Ga addn. of 0.04-0.k wt.% in excess of the stoichiometric amt. of Ga in the GaSb, and with the addn. of 0.001-0.01 wt.% of sulphur. The object is to obtain n-type GaSb (S) which exhibits relaxation of conductivity. Esp. used for the mfr. of tunnel diodes, and other electronic devices. When GaSb is cooled, e.g. to 90 degrees K, its specific electric resistance alters immediately to the equilibrium value at that temp. By using the invention, this alteration is delayed.