APPARATUS FOR THE EPITAXIAL GROWTH OF SEMICONDUCTING MATERIAL BY LIQUID PHASE EPITAXY FROM AT LEAST TWO SOURCE SOLUTIONS

摘要

An apparatus is disclosed for the epitaxial growth of semiconducting material by liquid phase epitaxy from at least two source solutions. A reaction chamber is designed of separable parts and can be suitably opened. Included within the reaction chamber are substrate wafers and the source solutions. The reaction chamber can be established within a furnace having temperature control means. It is capable of rotation about its axis which is a hollow tube. There are provided within the reaction chamber separating walls and baffles which form channels such that the substrate wafers are brought into contact by gravity with one of the source solutions at a time or are removed therefrom dependent on the rotation angle and on the number of completed revolutions of the reaction chamber.