APPARATUS FOR THE EPITAXIAL GROWTH OF SEMI-CONDUCTING MATERIAL BY LIQUID PHASE EPITAXY FROM AT LEAST TWO SOURCE SOLUTIONS

• 1. 用于在液-液萃取分离单元中将混合在分散物中的两种溶液分离成两种溶液相的方法和设备 [P] . 中国专利： CN102307635B . 2014.12.31
• 2. 用于在液-液萃取分离单元中将混合在分散物中的两种溶液分离成两种溶液相的方法和设备 [P] . 中国专利： CN102307635A . 2012-01-04
• 3. APPARATUS FOR THE EPITAXIAL GROWTH OF SEMICONDUCTING MATERIAL BY LIQUID PHASE EPITAXY FROM AT LEAST TWO SOURCE SOLUTIONS [P] . 美国专利： US3858553A . 1975-01-07

  机译： 至少两种源溶液中液相液相法对半导体材料表观生长的装置

• 4. Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide [P] . 美国专利： US10358741B2 . 2019-07-23

  机译： 用于单晶碳化硅的液相外延生长的种子材料以及用于单晶碳化硅的液相外延生长的方法

• 5. SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE [P] . 欧洲知识产权局专利： EP2657375B1 . 2018-08-08

  机译： 单晶硅碳化物的液相生长的种子材料和单晶硅碳化物的液相生长的方法

• 1. Silicon Film Fabrication by Liquid Phase Epitaxy at Low Temperature [J] . 半导体光子学与技术（英文版） . 1998,第001期
• 2. AlxGa1-xAs/GaAs Solar Cell Grown by Multi-substrate Liquid Phase Epitaxy [J] . 半导体光子学与技术（英文版） . 1998,第002期
• 3. FEATURE AND MECHANISMS OF LAYER GROWTH IN LIQUID PHASE EPITAXY OF SEMICONDUCTOR MATERIALS [C] . M. KONUMA NATO Advanced Study Institute on chemical physics of thin film deposition processes for micro- and nano- technologies . 2002
• 4. Lateral epitaxial growth techniques for gallium nitride thin films on 6H-silicon carbide(0001) substrates via metalorganic vapor phase epitaxy. [D] . Thomson, Darren Brent. 2001
• 5. The Growth of Photoactive Porphyrin-Based MOF Thin Films Using the Liquid-Phase Epitaxy Approach and Their Optoelectronic Properties [O] . Guy Olivier Ngongang Ndjawa, Mohamed R. Tchalala, Osama Shekhah, 2019
• 6. Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy [O] . Mouleeswaran, D., Koyama, T., Hayakawa, Yasuhiro 2011
• 7. Liquid Phase Epitaxial Growth of Hg(1-x)Cd(x)Te from Te-Rich Solutions [R] . Harman, T. C. 1981

• 1. Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy [J] . GAO Yuzhu ,GONG Xiuying ,FANG Weizheng . 稀有金属：英文版 . 2009,第4期
• 2. Application of halide vapor phase epitaxy for the growth of ultrawide band gap Ga_2O_3 [J] . Xiangqian Xiu ,Liying Zhang ,Yuewen Li . 半导体学报：英文版 . 2019,第1期
• 3. Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si Alloys [J] . 刘学锋 ,李建平 ,孙殿照 . 稀有金属：英文版 . 1997,第2期
• 4. 液-液两相介质中液滴在冲击作用下演变模式 [C] . 熊燃华 ,许明 ,李耀发 . 第十四届全国激波与激波管学术会议 . 2010
• 5. 脉冲筛板柱液液两相流分散相液滴行为研究 [A] . 李杰 . 2012