Light projection coupling of semiconductor type devices through the use of thermally grown or deposited SiO{HD 2 {B films

摘要

The disclosure relates to a method and system for coupling semiconductor components on a single semiconductor chip or wafer without providing the possibility for short circuits and/or capacitances between metallization layers where connections between one set of components via metallization must pass across the path of connections via metallization to other sets of components. This is accomplished by providing a light conducting path in the semiconductor chip or wafer, such as in the form of a silicon dioxide layer path between the elements to be coupled. A device is provided in the coupling path which is capable of passing a light beam to the elements themselves for activating them, the elements being activated by light impinging on them. The elements are light responsive for actuation, or actuated electrically by another adjacently located light responsive element. The device for providing the light can be a light emitting diode which is externally controlled, a set of mirrors which reflect light from an external laser beam or any other system capable of providing light. The light travels through the silicon dioxide layer which has the properties of a light pipe and will actuate all light responsive semiconductor devices in the crystal to which the path of silicon dioxide is connected. There is no short circuit or stray capacitance problem due to elimination of at least part of the metallization.