Method and device for the epitaxial deposition of gallium in the mixture with at least one element of the v. main group of the periodic table

• 1. 含MSix(M为选自第3～9族元素中的至少一种元素，其中，1／3≤x≤3)硅材料及其制造方法 [P] . 中国专利： CN107074559A . 2017-08-18
• 2. 一种铝镓氮晶片外延层中铝元素含量的测试方法 [P] . 中国专利： CN102539357B . 2014.06.11
• 3. Method and device for the epitaxial deposition of gallium in the mixture with at least one element of the v. main group of the periodic table [P] . 德国专利： DE1955971B2 . 1977-02-24

  机译： 外延沉积镓和元素周期表第v族主元素中至少一种元素的混合物的方法和装置

• 4. A method for the production of urea - and / or thiourea - compounds of the elements of the v. main group of the periodic table [P] . 德国专利： DE1155433C2 . 1964-04-30

  机译： 一种生产尿素和/或硫脲化合物的方法

• 5. A method for the production of urea - and / or thiourea - compounds of the elements of the v. main group of the periodic table [P] . 德国专利： DE1155433B . 1963-10-10

  机译： 一种生产尿素和/或硫脲化合物的方法

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• 3. Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method [O] . Yu Xu, Chunfu Zhang, Yaolin Cheng, 2019
• 4. Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition [O] . Polla Rouf, Rouzbeh Samii, Karl Rönnby, 2020
• 5. Deposition of Device Quality Epitaxial Layers of Gallium Nitride and Indium Nitride for Electronic Applications [R] . Francis, D. B. 1987

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