首页> 外国专利> Strip waveguide with FET amplifier - with source drain and gate in SC chip and functioning in consequence of differential saturation wave velocity

Strip waveguide with FET amplifier - with source drain and gate in SC chip and functioning in consequence of differential saturation wave velocity

机译:带FET放大器的带状波导-在SC芯片中具有源极漏极和栅极,并由于饱和波速差而起作用

摘要

The strip waveguide is produced on an insulating layer on the SC chip at such an angle to a line between source and drain, that when a voltage is applied between source and drain, a charge wave runs from source to drain at a velocity approx. equal to an electromagnetic wave propagation velocity in the strip waveguide. Propagation velocity of the electromagnetic wave in an SC plate (3) made of silicon, germanium or an SC material with similar band structure, is a little lower than saturation phase velocity of the charge wave (9) running from source (6) to drain (7), whose charge carriers can be slowed down by the field based on the electromagnetic wave.
机译:带状波导在SC芯片上的绝缘层上以与源极和漏极之间的线成一定角度的角度产生,这样,当在源极和漏极之间施加电压时,电荷波以大约10倍的速度从源极流向漏极。等于带状波导中电磁波的传播速度。电磁波在由硅,锗或具有相似能带结构的SC材料制成的SC板(3)中的传播速度略低于从源极(6)到漏极的电荷波(9)的饱和相速度。 (7),其电荷载流子可以被基于电磁波的场所放慢。

著录项

  • 公开/公告号DE2533154A1

    专利类型

  • 公开/公告日1977-02-10

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19752533154

  • 发明设计人 DOSSEJOACHIMPROF.DR.-ING.HABIL.;

    申请日1975-07-24

  • 分类号H03F3/16;H01L29/78;

  • 国家 DE

  • 入库时间 2022-08-23 00:05:22

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