Schottky junction integrated injection logic circuit - has buried layer within epitaxial layer on substrate with electrodes on adjacent zones

摘要

The integrated injection logic arrangement is for Schottky I2L gate with a load transistor followed by an output transistor. The collector of the former is connected to the base of the latter, which has its collector connected to three Schottky diodes, each followed by an output terminal. An n+ doped silicon substrate (10) has an epitaxial layer (102) and between them is a doped deeply implanted layer (108). This forms the base of the output transistor, and the epitaxial layer above the deeply implanted layer forms the collector region, while the part below forms the emitter region. Portions of the emitter form a lateral load transistor, with an electrode (121) above it, for an input.