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Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications

机译：基于GaAs外延层对微系统应用的GaAs外延层的肖特基场晶体管电神法诊断的特征

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S.P. Novosiadly; T.H. Benko; I.T. Kogut;
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年度 2019
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1. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (～80 nm) Si_(1-x)Ge_x step-graded buffer layers for high-κ Ⅲ-Ⅴ metal-oxide-semiconductor field effect transistor applications [J] . Michael M. Oye, Davood Shahrjerdi, Injo Ok, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2007,第3期

机译：器件兼容的砷化镓在具有薄（〜80 nm）Si_（1-x）Ge_x台阶缓变缓冲层的硅衬底上的分子束外延生长，用于高κⅢ-Ⅴ型金属氧化物半导体场效应晶体管的应用
2. Pure Germanium Epitaxial Growth on Thin Strained Silicon-Germanium Graded Layers on Bulk Silicon Substrate for High-Mobility Channel Metal-Oxide-Semiconductor Field-Effect Transistors [J] . S.DEY, S.JOSHI, D.GARCIA-GUTIERREZ Journal of Electronic Materials . 2006,第8期

机译：高迁移率沟道金属氧化物半导体场效应晶体管的体硅基板上应变硅-锗梯度薄层上的纯锗外延生长
3. Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide-semiconductor field-effect transistors [J] . S. Dey, S. Joshi, D. Garcia-Gutierrez, Journal of Electronic Materials . 2006,第8期

机译：在高迁移率沟道金属氧化物半导体场效应晶体管的体硅衬底上的应变硅锗梯度薄层上纯锗外延生长
4. Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors (DH-HEMTs) [C] . Meng-Kai Hsu, Jung-Hui Tsai, Shao-Yen Chiu, International Conference on Multifunctional Materials and Structures . 2008

机译：Schottky Bulk层设计在双异质结假形Algaas / Ingaas / Algaas高电子移动晶体管（DH-HEMTS）中的应用
5. Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition [D] . Donnelly, Joseph Patrick 2009

机译：基于外延锗层的金属氧化物半导体器件，通过超高真空化学气相沉积直接在硅衬底上选择性生长
6. Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors [O] . Mantu K. Hudait, Michael Clavel, Patrick Goley, -1

机译：AlAs / GaAs缓冲架构在Si上外延Ge的异质集成：适用于低功率鳍式场效应晶体管
7. Current transport behaviour of Au/n-GaAs Schottky diodes grown on Ge substrate with different epitaxial layer thickness over a wide temperature range [O] . Padha N., Sachdeva R., Sihotra R., 2011

机译：在宽温度范围内生长在具有不同外延层厚度的Ge衬底上的Au / n-GaAs肖特基二极管的电流传输行为
8. Metal-Semiconductor Field-Effect Transistors Fabricated in GaAs Layers Grown Directly on Si Substrates by Molecular Beam Epitaxy. [R] . Metze, G. M., Choi, H. K., Tsaur, B. Y. 1984

机译：通过分子束外延直接在si衬底上生长的Gaas层中制造的金属半导体场效应晶体管。

Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications

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